In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage $V_{BR}$ of 2 kV and an on-state resistance $R_{on}$ of 1.34 $text{m}Omega bullet $ cm2, the devices fabricated in this work achieved the highest power device figure-of-merit $V_{BR}^{2}/R_{on}$ of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage $V_{BR}$ of 2 kV and an on-state resistance $R_{on}$ of 1.34 $text{m}Omega bullet $ cm2, the devices fabricated in this work achieved the highest power device figure-of-merit $V_{BR}^{2}/R_{on}$ of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications. Leer más
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