2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance $R_{c}$ of $0.5 Omega cdot $ mm was […]