This article introduces a model for high-power microwave bipolar transistors and its associated parameter-measuring strategy inclusion of thermal phenomena in the dc characterization allows a good estimate of the device’s thermal resistance to be obtained. This type of model provides important capabilities for solid-state radar transmitter design.
This article introduces a model for high-power microwave bipolar transistors and its associated parameter-measuring strategy inclusion of thermal phenomena in the dc characterization allows a good estimate of the device’s thermal resistance to be obtained. This type of model provides important capabilities for solid-state radar transmitter design. Read More
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